From the moment of enterprise establishment in 1943, the test center activity has been dominated by arrangement and testing of the electronic component base for the influence of external effecting factors (EEF), development of technical standard documents and regulatory test methods.


Starting in 1950s

test methodology and test equipment are developed for EEE and ERE exposed to climatic and mechanical factors. EEE and micromodule testers are created.

The first standard technical documents “General technical conditions for ground communication equipment” are developed.

1960

by Regulation of the Council of Ministers of the USSR, the former Pavlovsky Palace (in Gatchina) was made over to the planning and design bureau. With the new facilities, the work on arrangement of the methodical and technical base for large-scale research of the EEE reliability began.

1962

the unique laboratory is organized to test EEE exposed to acoustic noises, random vibrations, microbiological factors.

The experimental plant of the Planning and design bureau is set up for serial production of testing, inspection and measuring equipment for the Ministry of Electronic Industry.

The enterprise (PKB-170) earns the status of the Scientific research institute of normalization and testing of electronic equipment (NIINIET), later renamed as the All-Union SRI “Electronstandart” (VNIIES).

1964

by order of the Ministry of Electronic Industry (Regulation of the Council of Ministers of the USSR) NIINIET is obliged to arrange testing and research of the influence of ionizing radiation on materials and ECS at the Ministry with the leading institutes specializing in product classes involved.

1965

departments and laboratories for specific research and testing of materials and electronic items are arranged at NIINIET and the leading enterprises of the Ministry of Electronic Industry.

Experimental research of the influence of gamma, electrons and protons on materials and electronic items on radiation sources are started at the Academy of Sciences of the USSR, Union Republics and the Higher School: Atomic Energy Institute named after Kurchatov (Moscow), Institute for Physics and Power Engineering (Obninsk), Leningrad State University named after Zhdanov, The Petersburg Nuclear Physics Institute named after Konstantinov (Gatchina).

1967-1968

the laboratory building is built and equipped with test apparatus for materials and EBC testing for space factors influence (cryogenic temperatures, extreme vacuum, proton and neutron irradiation, static electricity).

The first All-Union scientific and technical conference on radiation resistance of materials and EEE is organized in Leningrad.

the interagency standard НО 005.058 (the first regulatory document in the USSR regulating the requirements, standards and test methods for EBC exposed to mechanical, climatic and radiation factors) is developed together with the 22 Central Scientific-Research Institute of the Ministry of Defense.

By order of the Ministry of Electronic Industry #149 d/d 11.06.68, the test center is assigned to be the leading one in the industry in terms of EEE testing and research.

1969

the laboratory for radiation testing of materials and EEE is organized as the organization department of NIINIET on the basis of the Institute of Physics of the Academy of Sciences of the Latvian Soviet Socialist Republic.

Experimental research of EEE resistance to radiation sources starts at the Joint Institute for Nuclear Research in Dubna.

1971

the institute is assigned to be the leading one in the Committee of the defense sectors of industry in terms of standardization, metrology, reliability, radiation resistance as well as development of inspection, measuring and testing equipment.

Non-destructive methods of material and EEE control and testing are introduced.

1971-1992

reference books on EEE resistance to ionizing radiation, space factors and induction fields are developed covering about 80% of the items permitted for use in electronic radio equipment of military machinery as well as reference books on resistance of electronic equipment materials.

10 sets of scientific equipment with active electrostatic protection and operating voltage up to 100 kV are developed and launched as part of the artificial satellite “Kosmos”.

1974-1975

participation (in terms of testing) in preparation for collaborative space flight “Soyuz-Apollo” and in works on creation of the Soviet version of the strategic defense initiative.

1975-1980

the new complex of state standards “Climate-6” is developed together with the 22 Central Scientific-Research Institute of the Ministry of Defense and the leading institutes of the Ministry of Electronic Industry and requirements for special resistance are basically introduced to general and detailed specifications for electronic items.

late 1970sandearly 1980s

with young professionals in solid state physics, physical chemistry, microelectronic technology and computer engineering coming to the institute, development and creation of methods and means of destructive analysis and non-destructive testing begin to evolve using contemporary achievements in mass spectrometry, scanning electron microscopy, X-ray television, etc., which allows to investigate the EBC failure causes and mechanisms efficiently both in the course of testing and in operating conditions and predict reliability parameters of particular EEE classes and types scientifically and reasonably based on the results.

1980s

establishment of the network of weather stations in various regions of the USSR (Anapa, Batumi, Murmansk, Vladivostok) and in Cuba.

1981-1986

experimental research of EBC resistance is initiated at the unique plants of the All-Russian Scientific Research Institute of Experimental Physics, Arzamas-16.

The complex of RM standards (19 standards) regulating the radiation resistant EEE development procedure, methods to provide and assess the resistance is developed.

Collaborative work with scientific-production association of applied mechanics (Krasnoyarsk-26) is initiated in terms of on-board equipment development and field physical research of EEE proper operation on the “Horizon 21-41” series artificial satellites.

1985

All-Union SRI “Electronstandart” moves to a new building in Pobedy square.

1985-1990

more than 1000 types of specifically resistant EEE of various classes are developed at the enterprises of the Ministry of Electronic Industry and their production is deployed to provide creation of weapons and military control system equipment.

1989-1991

EEE testing is arranged and carried out during the field physical experiment at the Semipalatinsk Nuclear Test Site.

1990-1996

research is undertaken and 2 regulatory documents are developed regulating various class EEE resistance and reliability assessment methods during operation exposed to low-intensity ionizing radiation of space.



1999

in the framework of the «SESAT» satellite creation project, the first EEE screening tests are performed according to the program of the European Space Agency.

the new generation of state military standards “Climate-7” is developed in collaboration with the 22 Central Scientific-Research Institute of the Ministry of Defense.

Typical resistance test and assessment methods are developed for EEE of all main classes exposed to ionizing radiation regulated by the complex of state military standards “Climate-7”.

Organization of certification tests of foreign EEE, including those for resistance to radiation factors, due to its implementation during electronic radio equipment development for weaponry, military and special equipment.

2000s

initiation of certification tests of foreign EEE due to its increasing implementation in electronic radio equipment of the Russian manufacturers.

2000

by order of the Russian Agency for Control Systems d/d 23.01.2001 # 19 (by instruction of the government of the Russian Federation d/d June 29, 2000 # 22), the North-West regional certification test center is established.

2001

automated electronic directory of radiation resistance of the domestically produced and foreign electronic radio items and automated data base of radiation resistance of the foreign components are developed.

2003

by order of the department of radioelectronic industry of the Ministry of Industry and Trade # 121 d/d 5.09.2003, the test center of RSRI “Electronstandart” is assigned to be the basic test center of the radioelectronic industry.

2004

the test center is the first one in Russia to be equipped with contemporary ETC-780 testers for parametric and functional testing of digital VLSI with operating frequency up to 50MHz.

2005

the test center passes the milestone of the scope of testing: 500,000 pcs of domestically produced and 400,000 pcs of foreign EEEs per year.

2006

Full testing of the signaling processors ADSP-21535 “BlackfinDSP” and ADSP-21160 “SharkDSP” produced by Analog Device (the USA) is performed in Russia for the first time.

2008

Research and test laboratory for electronic modules is established. Methodology for product identification and counterfeit goods detection is developed.

By the decision of the Radioelectronic industry department of the Ministry of Industry and Trade of the Russian Federation #11-1223 d/d October 24, 2008, the multiple-access research and development center is established on the basis of the test center.

2009

Testing is mastered and the full complex of tests of programmable logic integral circuits of FPGA type with up to 4 million gates is performed.

A new milestone is passed in terms of scope of testing for the foreign EEE: 2,000,000,0 pcs. per year.

Moving to a new building equipped according to the contemporary requirements for production facilities for EEE testing and measurement. The test center is re-equipped with the unique apparatus for mechanical, climatic tests, physical and technical analysis, analog EEE measurements. Contemporary testers ЕТС-868 are purchased for parametric and functional testing of digital VLSI with the operating frequency up to 200MHz.

The EEE testing and certification center is established on the basis of the test center at the “Rostec” state corporation.

2010

The test center is included in the established Interdepartmental center of EEE radiation testing as the basic test center of the Ministry of Industry and Trade of the Russian Federation.

Automatic control system covering full test cycle is introduced. The system provides test quality and allows the test center customers to obtain current information in the course of the tests.

Reorganization of the work management system in the test center allows to achieve the milestone of the scope of testing for the foreign EEE: 5,000,000 pcs. per year.

2011

Introduction of work places for simulation of EEE exposed to separate charged particles of space on the basis of synchrocyclotron of PNPI of RAS (Gatchina, Leningrad region) and synchrotron of the Institute of theoretical and experimental physics (Moscow).

2012-2016

Investment projects of the Ministry of Industry and Trade of Russia are executed at the test center: “Technical re-equipment of the basic EEE testing and certification center (including foreign EEE) to provide reliability of electronic radio equipment of the high-priority complexes and weaponry, military and special equipment systems" and “Reconstruction and technical re-equipment of the test center to provide the complex of works of encapsulation and testing of functionally complex integral circuits”.

The test center of JSC “Russian Research Institute “Electronstandart” produces and supplies electronic directories of certification tests (IRS EEE) and resistance to radiation factors (IRS ASI). These systems are available to the public on the website of the test center.

Information and reference system of electronic component base (IRS EEE)

Information and reference system of national and foreign EEE (IRS EEE) is designed to collect, store and provide information about EEE testing to the enterprises manufacturing special- and general-purpose equipment, involved governmental agencies, parent enterprises, test centers and sub-suppliers. IRS EEE provides easy search by EEE classes, part types, their characteristics and influencing factors. It provides the EEE test requestors with the data on the course of testing as well as access to the structured test results (protocols, reports, additional materials). Agencies and parent enterprises may obtain statistical data on the performed tests (scope, nomenclature), application of national and foreign EEE that has passed the tests and on EBC reliability and other characteristics.


System data

IRS EEE contains records about tests performed at JSC “RSRI “Electronstandart” and by its subcontractors since 2009. It is updated on a real-time basis as new tests are being performed. In March 2014, IRS EEE contained data on tests of 13225 part types (6568 of national production and 6657 of foreign production), 234 classes, 524 national and foreign manufacturers of electronic components. Data on 20 484 tests.
                                                                 

Advantages for RSRIES TC customers

JSC “RSRI “Electronstandart” Test Center customers may obtain extended access to IRS EEE. It becomes possible for them to communicate with RSRIES TC electronically during negotiation process: coordinate contracts with RSRIES TC including lists of electronic components to be tested, test programs and techniques, additional agreements and co-decisions. One of the definite advantages is receiving timely information about the items that have failed the tests. Customers are then able to make decisions on the rejected lots quickly and efficiently. Resulting test protocols are available for customers almost immediately once they are transferred to IRS EEE from the automated test control system of RSRIES TC (TC ACS). All documentation related to the contract and performed tests is available for unlimited period of time after the contract is completed.

                                                           
Possibilities for other test centers and laboratories

Other test centers and laboratories may use the advantages of IRS EEE developing the interface between their own test control systems and IRS EEE, regularly uploading information about testing to the latter. RSRIES TC provides information about the interface upon request.

Possibilities for ministries and agencies

Involved ministries and agencies may use IRS EEE to analyze the need in electronic components during realization of import substitution programs, analyze the product range purchased by affiliates, obtain summarized information about the performed tests, scopes of delivery, reliability of EEE.

The information and reference system of electronic component base (IRS EEE) contains reference materials about the results of certification tests of domestically produced and foreign EEEs designed for kitting the gilt-edged apparatus of strategically valuable facilities performed at JSC “RSRI “Electronstandart”. Follow the link below to see a list of EEEs tested for compliance with the model of external influencing factors.

 

 

JSC “RSRI “Electronstandart” test center implements a wide range of below-mentioned destructive and non-destructive methods to test EEE for compliance with contemporary national and foreign standards. Using these methods together allows to perform comprehensive quality control rejecting unreliable items and thus increasing reliability and lifetime of the equipment based on them. optical microscopy; radioscopy; acoustic microscopy; electron microscopy; electron microprobe analysis; mass spectrometry; particle impact noise detection test (PIND-test); leakage monitoring using gross and fine leak methods; check of internal connection strength, die shear force, external lead strength, etc. Examples of defective products detected during destructive physical testin. Examples of defective products detected during diagnostic non-destructive testing with radioscopy and acoustic microscopy method. Examples of EEE lead coating composition.

                                                                                                                     

The test center studies the physics of failure mechanisms occurring in contemporary EEE structures including CMOS-technology based integral circuits with minimum feature sizes to 0.09 µm in order to update and improve the accelerated reliability testing techniques.
Degradation of electrical parameters is studied during EEE testing in order to investigate EEE reliability estimability under restrictions of limited time and small sample sizes. Prediction Degradation failure prediction methods are developed using time-series models and digital adaptive filters.
The test center studies the possibility to implement the following methods to estimate the EEE reliability according to the results of small sample size tests:

• information method;
• parametric function method;
• test results summation method;
• statistical hypothesis testing method,
• experimental design theory based method;
• contribution method;
• Bernoulli distribution based method;
• Bayes theorem (formula) based methood.

For the last 10 years, the statistics for foreign EEE accelerated reliability testing results have been accumulated and summarized. The obtained statistics allow to predict experimentally-confirmed reliability of the EEE being certified and compare it with predictions of the leading foreign EEE manufacturing companies. For the last 5 years, more than 20 standards of various levels have been developed and put in force: from company standards to GOST