Detecting counterfeit products

The testing center offers services of detecting counterfeit EEE taking into consideration the following criteria:

noncompliance to specifications; Examples of counterfeit products
noncompliance to the stated quality;
troubles in the manufacturing process;
chip pattern trouble;
restoration works detection;
die markings;
EEE assembly quality;
welds and connector routing quality;
electrical parameters and functionality

Destructive physical analysis

During destructive control in the RSRI Electronstandart testing center the following tests are used:

Mass spectrometry humidity control method (according to OST 11 073.013 and MIL-STD-883H and testing center own method);
Visual optical test (after opening the package) (according to OST 11 073.013, OST V 11.0219, GOST 16121 and MIL-STD-883H);
Scanning electronic microscopy methods (according to OST 11 073.013, OST 11 14.1012, OST 11.0219 and MIL-STD-883H);
Interconnect durability (according to OST 11 073.013, GOST 28578);
Die shift (according to OST 11 073.013, GOST 28578);
External terminals durability (according to OST 11 073.013, GOST RV).

Examples

Non-destructive control

During non-destructive control in the RSRI Electronstandart testing center the following tests are used:

X-ray inspection (according to OST 11 073.013-2008, OST V 11.0219, GOST R IEC 748-11-1-2001 and STO of the testing center);
Acoustic microscopy (according to MIL-STD-883H and the testing center own method)
Foreign particles control (according to OST 11 073.013-2008 and GOST RV);
Leak check (large and small break methods (according to OST 11 073.013-2008 and GOST RV).

Exaples

ECB failure analysis

For ECB failure analysis in the testing center the following physicotechnical control methods are used:

optical microscopy;
X-ray inspection;
acoustic microscopy;
electronic microscopy;
electron microprobe analysis;
mass spectrometry;
foreign particles control (PIND test)
leak check (large and small break methods)

ECB failure analysis examples (example 1 and example 2)
Examples of physicotechnical ECB failure analysis

Non-destructive control

X-ray inspection
Acoustic microscopy
Foreign particles control
Leak check (large and small break methods)

Destructive physical analysis

Mass spectrometry humidity control method
Visual optical control
Scanning electronic microscopy methods
Interconnect durability control
Die shift test
Leads durability control

Acoustic microscope Evolution II Probe station Signatone S-1160 Mounting packages with reference humidity

az 3 min

Interconnect durability control. Condor XYZTEC dies shift Decapsulator NSC PS102W

ECB Measuring

The test center performs parametric and functional testing of ECB and electronic radio equipment of:

Digital VLSI: test systems for 512 channels, clock frequency from 50 mHz to 400 MHz, period duration from 20 ns, pulse rise time of 5 ns at the voltage of 5V;

Tester for VLSI digital   Tester for VLSI     Facility for digital   Mobile test system ТРО04390А
parameters J750, digital parameters   ECB measurements   for the influence of
Teradyne (the USA)   ETS-868 rapid temperature change
Temptronic installed on the board

digital-to-analog and analog-to-digital integral circuits: test systems for 128 channels, steepness of the rise increment 1.5 V/ns, differential and integral nonlinearity less than 0.00008% FSR, resolving capacity of voltage up to 5 mV, resolving capacity of current up to 100 nA, frequency up to 50 MHz with the accuracy of ±0,01%, influence of supply voltage/reference voltage change up to 120 dB, dynamic range up to 90 dB;

Stand for parametric monitoring of analog and digital
integral circuits and devices, DMT-119 and ETS-780 tester

analog integral circuits: measuring current resolution up to 1 fA, measuring voltage resolution up to 1 nV;

Facility for analog ECB measurements Digital tester for integral circuit parametric control
“FORMULA 2K”

communication and radio technical microwave integral circuits: frequency from 50 MHz to 20 GHz;

Measuring complexes for microwave parameters Measuring complex for microwave parameters
DMT-118, DMT-134

semiconductor devices: voltage from 1 µV to 1100 V, in DC mode from 1 pA to 100 A, in pulse mode from 1 A to 10 A;

Parametric monitoring of semiconductors, diodes and stabilitrons Parametric monitoring of transistors
DMT-120 DMT-220, chamber Espec SU-261

resistors, capacitors, chokes, transformers, resonators: frequency from 20 Hz to 3 GHz, resistance from 0.01 mOhm to 99.9999 MOhm, impedance from 3 mOhm to 500 MOhm, capacity from 0.01 fF to 9.9999 F, inductance from 0.01 nH to 99.9999 kH, Q-factor from 0.01 to 99999.9, conductivity from 300 µS to 300 S, frequency step control from 1 Hz up to GHz units, methods of GOST RV, MIL-STD;

High precision LCR meter DMT-138 LCR meter DMT-137 Workplace No. 1
capacitor electric parameters control

Workplace No. 2 Workplace resistor electric Coils, chokes, transformers
capacitor electric parameters control parameters control parameters control workplaces

Solid-state light sources, photodiodes and devices based on them;

Dark room with 2 70613 Dark room with 2 electric generators, 1
NS monochromators (Newport) and an optical sphere oscilloscope and component power system

relay;

Measurement system for functional and parametric testing
of low-current FT17 relay, LLC Sovtest ATE (Russia)

modules, circuit boards and network devices;

SU-001 control stand

switching devices;
mounting devices;

Voltage tester GPT-815 teraohmmeter Е6-13а

Detecting counterfeit products

Destructive physical analysis

Non-destructive control

ECB failure analysis

ECB Measuring

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